MagnaChip 60R360Q 600V 0.36Ω N-Channel Power MOSFET (TO-220F) Used

Product details

Description The 60R360Q is a 600V N-channel power MOSFET manufactured by MagnaChip Semiconductor, built using their advanced super junction technology to achieve very low on-resistance and low gate charge. This design provides much higher efficiency by using optimized charge coupling technology, resulting in low power loss through high-speed switching combined with a low on-resistance. Rated for 600V drain-source voltage and featuring an on-resistance of 0.36Ω , this MOSFET is 100% avalanche tested, ensuring minimal lot-to-lot variation for robust, reliable device performance. It's built in a "Green," lead-free, halogen-free package for environmentally compliant manufacturing. Housed in the isolated TO-220F package (fully-molded body), it simplifies heatsink mounting since no separate insulating mica pad is typically required, while still providing solid thermal performance. Its combination of high voltage rating and efficient switching makes it well suited for power factor correction stages, switching power supplies, adapters, motor control, and DC-DC converter circuits. Key Specifications Type: N-Channel Power MOSFET (Super Junction) Manufacturer: MagnaChip Semiconductor Package Marking: 60R360Q Package: TO-220F (isolated, 3-lead) Drain-Source Voltage (VDSS): 600V (min) Static Drain-Source On-Resistance (RDS(on)): 0.36Ω max @ VGS = 10V Continuous Drain Current (ID): ~11A @ TC=25°C 100% avalanche tested RoHS compliant, lead-free, halogen-free "Green" package Common Applications Power factor correction (PFC) stages Switching power supplies and adapters Motor control circuits DC-DC converters Package Includes 1 x MagnaChip 60R360Q N-Channel MOSFET (TO-220F)

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