Toshiba TK65A10N1 100V 65A N-Channel Power MOSFET TO-220SIS USED

Product details

Description The TK65A10N1 is a N-channel power MOSFET manufactured by Toshiba, built using their U-MOSVIII-H silicon N-channel MOS process. It's housed in the TO-220SIS through-hole package, and designed primarily for switching voltage regulator applications where low conduction loss and high current handling are essential. This MOSFET is rated for 100V drain-source voltage and a high 65A continuous drain current , with a very low drain-source on-resistance of just RDS(on) = 4.0mΩ (typ.) / 4.8mΩ (max) at VGS = 10V — giving excellent conduction efficiency and minimal power loss even under heavy current loads. Its low RDS(on) combined with a gate threshold voltage of around 4V (max) makes it well suited for high-efficiency, high-current switching designs. With a maximum power dissipation of 45W and a junction temperature rating up to 150°C, the TK65A10N1 offers solid thermal headroom for demanding power conversion applications, including DC-DC converters, switching voltage regulators, motor drivers, and battery management/protection circuits. Key Specifications Type: N-Channel Enhancement-Mode Power MOSFET Manufacturer: Toshiba Package: TO-220SIS (3-lead, through-hole) Drain-Source Voltage (VDS): 100V Continuous Drain Current (ID): 65A Gate-Source Voltage (VGS): ±20V max RDS(on): 4.0mΩ (typ.) / 4.8mΩ (max) @ VGS = 10V Gate Threshold Voltage (VGS(th)): ~4V max Total Gate Charge (Qg): 81nC Max Power Dissipation (PD): 45W Max Junction Temperature (Tj): 150°C Common Applications Switching voltage regulators DC-DC converters Motor drivers and battery management systems High-current, low-voltage power switching circuits Package Includes 1 x Toshiba TK65A10N1 N-Channel MOSFET (TO-220SIS)

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