TK40A10N1 N-Channel Power MOSFET
Description Marked "K40A10N1" on the package with Toshiba's logo, this is Toshiba's TK40A10N1 , part of their U-MOS IV power transistor series. It is an N-channel enhancement mode MOSFET built in a fully isolated TO-220SIS (TO-220F equivalent)...
SKU: sb5
Product details
Description Marked "K40A10N1" on the package with Toshiba's logo, this is Toshiba's TK40A10N1 , part of their U-MOS IV power transistor series. It is an N-channel enhancement mode MOSFET built in a fully isolated TO-220SIS (TO-220F equivalent) plastic package, designed specifically for low-voltage, high-current switching applications. It features an extremely low drain-source on-resistance ( $R_{DS(ON)}$ ), low gate charge ( $Q_g$ ), and excellent switching speed, making it exceptionally well-suited for efficient power conversion and motor drive circuits. Key Specifications Type: N-Channel Enhancement Mode Power MOSFET (U-MOS IV) Manufacturer: Toshiba Package Marking: K40A10N1 Package: TO-220SIS (Isolated 3-pin through-hole) Drain-Source Voltage ( $V_{DSS}$ ): 100V Drain Current ( $I_D$ ): 40A (Continuous, $T_C = 25^\circ\text{C}$ ) Pulsed Drain Current ( $I_{DP}$ ): 120A Gate-Source Voltage ( $V_{GSS}$ ): $\pm 20\text{V}$ max Gate Threshold Voltage ( $V_{GS(th)}$ ): 2.0V to 4.0V $R_{DS(ON)}$ , max: $0.0084\,\Omega$ ( $8.4\,\text{m}\Omega$ ) at $V_{GS} = 10\text{V}$ Power Dissipation ( $P_D$ ): 35W Total Gate Charge ( $Q_g$ ): 46nC (typ.) Max Channel Temperature: 150°C Common Applications High-current DC-DC converters Switching regulators and power supplies (SMPS) Synchronous rectification in power systems Motor drives and battery management systems (BMS) Package Includes 1 x Toshiba TK40A10N1 N-Channel Power MOSFET (TO-220SIS)
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