TK17A80W N-Channel Power MOSFET
Description Marked "K17A80W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK17A80W, an N-channel MOSFET rated 800V with an on-resistance of 0.29Ω at 10V gate drive, built in the TO-220SIS...
SKU: sb30
Product details
Description Marked "K17A80W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK17A80W, an N-channel MOSFET rated 800V with an on-resistance of 0.29Ω at 10V gate drive, built in the TO-220SIS package on Toshiba's DTMOSIV process. The isolated TO-220SIS outline simplifies mounting to a heatsink without a separate insulating pad. Key features include a low typical drain-source on-resistance of RDS(ON) = 0.25Ω, achieved through a super junction structure (DTMOS), easy gate switching control, and enhancement-mode operation with a gate threshold voltage of 3.0 to 4.0V (VDS = 10V, ID = 0.85mA). Testing conditions for avalanche rating use VDD = 90V, initial channel temperature of 25°C, L = 74.5mH, RG = 25Ω, with an avalanche current (IAS) of 3.4A, and the channel temperature must not exceed 150°C. As with other DTMOS-series parts, it's intended primarily for switching voltage regulator applications. Key Specifications Type: N-Channel Enhancement Mode Power MOSFET (Super Junction / DTMOSIV) Manufacturer: Toshiba Semiconductor Package Marking: K17A80W Package: TO-220SIS, isolated, 3-pin (Gate, Drain, Source) Drain-Source Voltage (VDSS): 800V Continuous Drain Current (ID): 17A RDS(ON), typical: 0.25Ω Gate Threshold Voltage (Vth): 3.0 to 4.0V Avalanche Current (IAS): 3.4A Max Channel Temperature: 150°C Process: DTMOSIV (super junction structure) Common Applications Switching voltage regulators Offline SMPS and flyback converters High-voltage (800V-class) power switching designs Package Includes 1 x Toshiba TK17A80W N-Channel Power MOSFET (TO-220SIS)
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