STMicroelectronics 40N60M2 600V 34A N-Channel Power MOSFET (TO-220FP, Isolated) Used

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Description The 40N60M2 is an N-channel power MOSFET manufactured by STMicroelectronics, developed using their MDmesh M2 technology. Thanks to its strip layout and improved vertical structure, the device delivers low on-resistance and optimized switching characteristics, making it well suited for the most demanding high-efficiency power converter designs. Rated for 600V drain-source voltage and 34A continuous drain current , with a low typical on-resistance of 78mΩ , this MOSFET is built for extremely low gate charge, giving fast, efficient switching with reduced drive losses. The device is 100% avalanche tested and features Zener protection for enhanced ruggedness, along with a low gate input resistance that improves switching performance in demanding circuits. Based on the package visible on this unit — a fully-molded, isolated body with no exposed metal tab — this is the TO-220FP (isolated) package variant of the 40N60M2 family, which simplifies heatsink mounting since no separate insulating mica pad is typically required, while still delivering solid thermal performance for high-power switching applications. Key Specifications Type: N-Channel Power MOSFET (MDmesh M2 technology) Manufacturer: STMicroelectronics Package Marking: 40N60M2 Package: TO-220FP (isolated, 3-lead) Drain-Source Voltage (VDS): 600V Continuous Drain Current (ID): 34A @ TC=25°C (22A @ TC=100°C) RDS(on): 78mΩ typical Total Power Dissipation (PTOT): 250W @ TC=25°C Gate-Source Voltage (VGS): ±25V max 100% avalanche tested, Zener-protected Common Applications LLC and resonant converters High-efficiency switching power supplies Motor drives and industrial power conversion General high-voltage switching applications Package Includes 1 x STMicroelectronics 40N60M2 N-Channel MOSFET (TO-220FP)

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