STD3NK80Z 800V 2.5A N-Channel Power MOSFET

Product details

Description Marked "D3NK80Z" on the package with STMicroelectronics' logo, this is STMicroelectronics' STD3NK80Z (or STU3NK80Z), an 800V N-channel SuperMESH™ Power MOSFET. Produced using ST's high-voltage SuperMESH™ technology, it features low on-resistance ( $R_{DS(ON)}$ ), high $dv/dt$ capability, and integrated Zener diodes across the gate-source for electrostatic discharge (ESD) protection. Housed in a IPAK (TO-251) through-hole package (or DPAK style with straight leads), it is designed for compact, high-efficiency switching circuits. Key Specifications Type: N-Channel Enhancement Mode Power MOSFET (SuperMESH™) Manufacturer: STMicroelectronics Package Marking: D3NK80Z / 0Z / 6K26HB47 Package: TO-251 / IPAK (3-pin through-hole) Drain-Source Voltage ( $V_{DSS}$ ): 800V Drain Current ( $I_D$ ): 2.5A (Continuous, $T_C = 25^\circ\text{C}$ ) Pulsed Drain Current ( $I_{DP}$ ): 10A Gate-Source Voltage ( $V_{GSS}$ ): $\pm 30\text{V}$ max (ESD Protected via built-in Zener diodes) Gate Threshold Voltage ( $V_{GS(th)}$ ): 3.0V to 4.5V $R_{DS(ON)}$ , max: $4.5\,\Omega$ at $V_{GS} = 10\text{V}$ Power Dissipation ( $P_D$ ): 70W Max Junction Temperature: 150°C Common Applications Switch-Mode Power Supplies (SMPS) for small offline adapters Auxiliary power supply stages High-voltage, low-power switching circuits Electronic ballasts for lighting Package Includes 1 x STMicroelectronics STD3NK80Z 800V 2.5A N-Channel Power MOSFET (TO-251 / IPAK)

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