IRFP4668 MOSFET Irfp 4668 IRFP4668 IRFP4668PBF MOSFET N-ch 200V 130A TO-247

Product details

IRFP4668 N-Channel Power MOSFET The IRFP4668 is a high-performance HEXFET® Power MOSFET engineered for high-power switching and industrial applications. With an exceptionally low on-resistance and high current handling capacity, it is the ideal choice for heavy-duty DC motor drives, high-efficiency inverters, and SMPS designs. Core Technical Specifications Parameter Value Drain-to-Source Voltage (Vdss) 200V Continuous Drain Current (Id) 130A (at Tc = 25°C) Pulsed Drain Current (Idm) 520A Static Rds(on) (Typical) 8.0 mΩ Total Gate Charge (Qg) 161 nC Max Power Dissipation (Pd) 520W Package Type TO-247AC Key Features Ultra-Low On-Resistance: Minimizes conduction losses and heat generation. High Ruggedness: Improved avalanche and dynamic dV/dt ruggedness for hard-switching environments. Enhanced Body Diode: High dI/dt capability for efficient synchronous rectification. Wide Temperature Range: Operates up to 175°C, suitable for demanding industrial conditions. Common Applications Uninterruptible Power Supplies (UPS) High-Current DC Motor Controllers Solar Inverters and Power Converters Synchronous Rectification in SMPS Note: Due to the high gate charge (161nC), it is recommended to use a robust gate driver circuit to ensure efficient switching speeds and thermal stability in high-frequency designs.

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