MJE13003G 700V 1.5A NPN Power Transistor
Description Marked "MJE13003G" on the package with UTC's logo, this is Unisonic Technologies' (UTC) MJE13003G (a variant of the 13003 family), a high-voltage, high-speed NPN silicon power bipolar junction transistor (BJT). It is engineered...
SKU: sb35
Product details
Description Marked "MJE13003G" on the package with UTC's logo, this is Unisonic Technologies' (UTC) MJE13003G (a variant of the 13003 family), a high-voltage, high-speed NPN silicon power bipolar junction transistor (BJT). It is engineered specifically for high-voltage, fast-switching power applications, featuring low collector-emitter saturation voltage and robust reverse-bias safe operating area (RBSOA). Housed in a TO-126 package with a metal mounting tab, it provides reliable power handling and heat dissipation for off-line power switching and electronic ballast circuits. Key Specifications Type: High-Voltage Fast-Switching NPN Power BJT Transistor Manufacturer: UTC (Unisonic Technologies Co., Ltd.) Package Marking: MJE13003G / P01SHTX Package: TO-126 (3-pin through-hole with mounting tab) Collector-Base Voltage ( $V_{CBO}$ ): 700V Collector-Emitter Voltage ( $V_{CEO}$ ): 400V Emitter-Base Voltage ( $V_{EBO}$ ): 9V Collector Current ( $I_C$ ): 1.5A (Continuous), 3.0A (Peak) Base Current ( $I_B$ ): 0.75A max Collector-Emitter Saturation Voltage ( $V_{CE(sat)}$ ), max: $0.5\text{ V}$ at $I_C = 0.5\text{ A}, I_B = 0.1\text{ A}$ Power Dissipation ( $P_D$ ): 20W ( $T_C = 25^\circ\text{C}$ ) DC Current Gain ( $h_{FE}$ ): 8 to 40 Operating Junction Temperature Range: $-55^\circ\text{C}$ to $+150^\circ\text{C}$ Common Applications Electronic ballasts for Compact Fluorescent Lamps (CFL) and tube lights Switch-Mode Power Supplies (SMPS) and low-power flyback converters Battery chargers and AC-DC power adapters High-voltage, high-speed power switching and inductive load drivers Package Includes 1 x UTC MJE13003G 700V 1.5A NPN Power Transistor (TO-126)
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