IPP045N10N3G 100V100A N-Channel Power MOSFET

Product details

Description Marked "045N10N" on the package with Infineon's logo, this is Infineon's IPP045N10N3G (also available as IPB045N10N3G/IPI045N10N3G variants), part of their OptiMOS3 power transistor family. It's an N-channel MOSFET built for low-voltage, high-current switching applications, featuring an excellent gate charge × RDS(ON) product (figure of merit), very low on-resistance, a 175°C maximum operating temperature, and Pb-free/RoHS-compliant lead plating. The OptiMOS3 process is optimized to minimize conduction and switching losses simultaneously, making this part well suited for high-efficiency, high-current DC-DC conversion and synchronous rectification applications where both low RDS(ON) and fast switching are needed. Key Specifications Type: N-Channel Enhancement Mode Power MOSFET (OptiMOS3) Manufacturer: Infineon Technologies Package Marking: 045N10N Package: TO-220, 3-pin, through-hole Drain-Source Voltage (VDS): 100V Drain Current (ID): 100A Gate-Source Voltage (VGS): 20V max Gate Threshold Voltage (VGS(th)): 3.5V max RDS(ON), max: 0.0045Ω (4.5mΩ) Power Dissipation: 214W Total Gate Charge (Qg): 88nC Output Capacitance (Coss): 1210pF Max Junction Temperature: 175°C Common Applications High-current, low-voltage DC-DC converters Synchronous rectification Battery-powered and high-efficiency switching power supplies Motor drive circuits requiring low conduction loss Package Includes 1 x Infineon IPP045N10N3G N-Channel Power MOSFET (TO-220)

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