HH75N120 IGBT Powerful And Versatile
HH75N120 IGBT: A Powerful and Versatile Solution The HH75N120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With its fast switching speed,...
Product details
HH75N120 IGBT: A Powerful and Versatile Solution The HH75N120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With its fast switching speed, high current capacity, and low on-state voltage, the HH75N120 is an ideal choice for a wide range of applications, including: Motor control Power supplies Inverters Solar power systems Uninterruptible power supplies (UPS) Key Benefits of the HH75N120 IGBT Fast switching speed for efficient power conversion High current capacity to handle demanding loads Low on-state voltage for reduced power losses Rugged construction for reliability and durability Wide operating temperature range for versatile applications Technical Specifications Parameter Value Collector-Emitter Voltage (V CE(sus) ) 1200 V Collector Current (I C ) 75 A Collector-Emitter Saturation Voltage (V CE(sat) ) 1.8 V (typ) Input-Output Capacitance (C iss ) 1500 pF Junction Temperature (T j ) -40°C to +150°C Package Includes 1 x G60N100 IGBT
Contact IBBS to confirm current availability, exact model, and pricing.