HCS70R360S N-Channel Power MOSFET

Product details

Description Marked "HCS70R360S" on the package, this is Huacan Semiconductor's HCS70R360S , part of their 700V Super Junction power MOSFET family. It is an N-channel enhancement mode power transistor engineered using advanced super junction technology to achieve low on-resistance ( $R_{DS(ON)}$ ) and optimized gate charge ( $Q_g$ ) performance. It is housed in an isolated TO-220F package, which provides electrical isolation for easy heat-sink mounting and thermal management in high-voltage, high-efficiency power converters. Key Specifications Type: N-Channel Enhancement Mode Super Junction Power MOSFET Manufacturer: Huacan Semiconductor Package Marking: HCS70R360S Package: TO-220F (Isolated 3-pin through-hole) Drain-Source Voltage ( $V_{DSS}$ ): 700V Drain Current ( $I_D$ ): 11A (Continuous, $T_C = 25^\circ\text{C}$ ) Pulsed Drain Current ( $I_{DP}$ ): 33A Gate-Source Voltage ( $V_{GSS}$ ): $\pm 30\text{V}$ max Gate Threshold Voltage ( $V_{GS(th)}$ ): 2.5V to 4.5V $R_{DS(ON)}$ , max: $0.360\,\Omega$ ( $360\,\text{m}\Omega$ ) at $V_{GS} = 10\text{V}$ Power Dissipation ( $P_D$ ): 31W Max Junction Temperature: 150°C Common Applications Switch-Mode Power Supplies (SMPS) Power Factor Correction (PFC) stages LED lighting drivers and ballast power supplies Auxiliary power supplies for industrial equipment and consumer electronics Package Includes 1 x Huacan Semiconductor HCS70R360S N-Channel Power MOSFET (TO-220F)

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