HCS60R150S 600V N-channel Super Junction Power MOSFET TO-220F Package

Product details

The HCS60R150S is a high-performance N-Channel Super Junction MOSFET designed for high-efficiency power switching applications. Featuring a breakdown voltage of 600V and a low on-resistance of 0.15Ω, this component is engineered to minimize power loss and improve thermal performance. Encased in a fully isolated TO-220F package, it offers excellent insulation and is easy to mount on heat sinks without requiring additional insulating kits. This transistor is widely used in AC-DC power supplies, LED lighting drivers, and PFC (Power Factor Correction) circuits. Key Features: High Voltage Capability: 600V Drain-Source Voltage (VDS). Low On-Resistance: RDS(on) of typically 150mΩ (0.15Ω) ensures high efficiency and reduced heat generation. Fast Switching: Optimized for high-frequency switching applications. Robust Design: 100% avalanche tested for reliability. Package Type: TO-220F (Full Pack) – Plastic encapsulated body for electrical isolation. Applications: Switch Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) PFC (Power Factor Correction) stages LED Lighting Drivers Motor Control Circuits Solar Inverters Technical Specifications: Part Number: HCS60R150S Type: N-Channel MOSFET Drain-Source Voltage (Vdss): 600V Continuous Drain Current (Id): ~20A - 25A (Depends on thermal management) RDS(on): 0.15Ω (Max) Gate Charge (Qg): Low gate charge for fast switching Mounting Type: Through Hole Package / Case: TO-220F (Isolated) Package Includes: 1 x HCS60R150S 600V Power MOSFET

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