FQPF3N80C 800V N-Channel Power MOSFET TO-220F

Product details

Description : The FQPF3N80C is an N-channel QFET enhancement-mode power MOSFET built using planar stripe and DMOS technology, engineered to reduce ON-state resistance while delivering strong switching performance and high avalanche energy strength. It's well suited for switched-mode power supplies, active power factor correction (PFC) circuits, and electronic lamp ballasts. Key Specifications Parameter Value Manufacturer Fairchild Semiconductor (now onsemi) Part Number FQPF3N80C Type N-Channel MOSFET Package TO-220F (isolated tab, 3-pin) Drain-Source Voltage (VDS) 800V max Continuous Drain Current (ID) 3A RDS(on) 4.8Ω max @ VGS = 10V, ID = 1.5A Gate-Source Voltage (VGS) 30V max Gate Threshold Voltage (VGS(th)) 5V max Power Dissipation (Pd) 39W max Gate Charge Typ. 13nC (low gate charge) Reverse Transfer Capacitance (Crss) Typ. 5.5pF (low Crss) Avalanche Rating 100% avalanche tested Common Applications Switch-mode power supplies (SMPS) Electronic ballasts High-voltage switching circuits Active power factor correction (PFC) Package Includes 1 x Fairchild FQPF8N80C N-Channel MOSFET (TO-220F)

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