Used FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package

Product details

FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package Product Description: The FGA50N100BNTD2 is a high-performance 1000V, 50A N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Built using trench-gate and NPT (Non-Punch Through) technology, this IGBT delivers excellent efficiency, fast switching speeds, and rugged reliability. It features a built-in ultra-fast recovery diode , making it well-suited for hard-switching circuits such as UPS systems , welding machines , motor drives , and industrial inverters . With a low saturation voltage (typically 2.5V) and strong surge current capability, the FGA50N100BNTD2 offers superior thermal and electrical performance in a compact TO-3P package . ⚙️ Key Specifications Parameter Specification Collector–Emitter Voltage (V_CES) 1000 V Collector Current (I_C) 50 A @ 25 °C; 35 A @ 100 °C Pulsed Collector Current (I_CM) 200 A Saturation Voltage (V_CE(sat)) 2.5 V @ 60 A typical; 2.9 V max Gate–Emitter Voltage (V_GE) ±25 V max Turn-On Delay (t_d(on)) 34 ns; Rise Time 68 ns Turn-Off Delay (t_d(off)) 243 ns; Fall Time 65–100 ns Gate Charge (Q_g) 257 nC typical Power Dissipation (P_D) 156 W @ 25 °C; 63 W @ 100 °C Junction Temperature (T_j) –55 °C to +150 °C Package TO‑3P (TO‑3 plastic), 3-pin through-hole ⚙️ Typical Applications: Uninterruptible Power Supplies (UPS) Welding equipment and induction heaters High-voltage industrial inverters Motor control systems General-purpose high-power switching applications Package includes: 1x Used FGA50N100BNTD2 – 1000 V, 50 A NPT Trench IGBT with Built-in Fast Diode, TO‑3P Package

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